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2N5432/5433/5434
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N5432 2N5433 2N5434
VGS(off) (V)
-4 to -10 -3 to -9 -1 to -4
rDS(on) Max (W)
5 7 10
ID(off) Typ (pA)
10 10 10
tON Typ (ns)
2.5 2.5 2.5
FEATURES
D D D D D Low On-Resistance: 2N5432 <5 W Fast Switching--tON: 2.5 ns High Off-Isolation--I D(off): 10 pA Low Capacitance: 11 pF Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
APPLICATIONS
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
DESCRIPTION
The 2N5432/5433/5434 are suitable for high-performance analog switching and amplifier applications. Breakdown voltage characteristics, low on-resistance, and very fast switching make these devices are ideal for a wide range of applications. The hermetically-sealed TO-206AC (TO-52) package is suitable for processing per MIL-S-19500 (see Military Information). For similar products in TO-236 (SOT-23) or TO-226AA (TO-92) packages, see the J/SST108 series data sheet.
TO-206AC (TO-52)
S 1
2 D Top View
3 G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2.4 mW/_C above 25_C www.vishay.com
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Document Number: 70245 S-04028--Rev. F, 04-Jun-01
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2N5432/5433/5434
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5432 2N5433 2N5434
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc
Symbol
Test Conditions
Typa Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VDS(on) rDS(on) VGS(F)
IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 3 nA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 10 mA VDS = 5 V, VGS = -10 V
-32
-25 -4 150 -10
-25 -3 100 -200 -200 -200 -200 -9
-25 V -1 30 -200 -200 -4 mA pA nA pA nA mV W V
-5 -10 -10 10 20
200 200 50
200 200 70 7
200 200 100 10
Drain Cutoff Current Drain-Source On-Voltage Drain-Source On-Resistance Gate-Source Forward Voltagec
TA = 150_C VGS = 0 V, ID = 10 mA IG = 1 mA , VDS = 0 V
2 0.7
5
Dynamic
Common-Source Forward Transconductancec Common-Source Output Conductancec Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec gfs gos rds(on) Ciss Crss en VDS = 0 V, VGS = -10 V f = 1 MHz VDS = 5 V, ID = 10 mA f = 1 kHz 17 600 5 20 11 3.5 30 15 7 30 15 10 30 pF 15 nV Hz mS mS W
VGS = 0 V, ID = 0 mA f = 1 kHz
VDS = 5 V, ID = 10 mA f = 1 kHz
Switching
Turn-On Timeb td(on) tr td(off) tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. VDD = 1.5 V, VGS(H) = 0 V See Switching Circuit 2 0.5 4 18 4 1 6 30 4 1 6 30 4 1 ns 6 30 NIP
Turn-Off
Timeb
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Document Number: 70245 S-04028--Rev. F, 04-Jun-01
2N5432/5433/5434
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V 16 800
20 rDS(on) - Drain-Source On-Resistance ( )
1000 gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA)
200
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
50 gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz gos - Output Conductance (mS)
160
40
12
rDS
600
120
gfs
30
8
IDSS
400
80
gos
20
4
200
40
10
0 0 -4 -8 -6 VGS(off) - Gate-Source Cutoff Voltage (V) -2 -10
0
0 0 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -2 -10
0
Output Characteristics
100 VGS(off) = -2 V 80 ID - Drain Current (mA) ID - Drain Current (mA) 80 100
Output Characteristics
VGS(off) = -4 V
60
VGS = 0 V -0.2 V
60 -0.5 V 40
VGS = 0 V
40 -0.4 V 20 -0.6 V -0.8 V 0 0 2 6 8 4 VDS - Drain-Source Voltage (V) 10
-1.0 V 20 -1.5 V -0.2 V 0 0 0.3 0.4 0.1 0.2 VDS - Drain-Source Voltage (V) 0.5
Turn-On Switching
5 tr approximately independent of ID VDD = 1.5 V, RG = 50 W VGS(L) = -10 V Switching Time (ns) 30
Turn-Off Switching
td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V 24 VGS(off) = -2 V
4 Switching Time (ns)
3
td(on) ID = 10 mA
ID = 25 mA
18
tf
2
12
VGS(off) = -8 V
1
tr
6
td(off)
0 0 -6 -8 -4 VGS(off) - Gate-Source Cutoff Voltage (V) -2 -10
0 0 5 10 15 ID - Drain Current (mA) 20 25
Document Number: 70245 S-04028--Rev. F, 04-Jun-01
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7-3
2N5432/5433/5434
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50 rDS(on) - Drain-Source On-Resistance ( )
On-Resistance vs. Drain Current
40 TA = 25_C rDS(on) - Drain-Source On-Resistance ( )
On-Resistance vs. Temperature
ID = 10 mA rDS changes X 0.7%/_C 32
40
30 VGS(off) = -2 V
24
VGS(off) = -2 V
20
16 -4 V 8 -8 V
-4 V 10 -8 V 0 1 10 ID - Drain Current (mA) 100
0 -55 -35 -15 25 5 45 65 TA - Temperature (_C) 85 105 125
Capacitance vs. Gate-Source Voltage
100 VDS = 0 V f = 1 MHz 80 Capacitance (pF) 10 nA 5 mA 60 IG - Gate Leakage 1 nA 100 nA
Gate Leakage Current
TA = 125_C ID = 10 mA
1 mA IGSS @ 125_C
40 Ciss 20 Crss
100 pA TA = 25_C 10 pA 10 mA
5 mA
1 mA IGSS @ 25_C
0 0 -4 -8 -12 -16 -20
1 pA 0 4 8 12 16 20
VGS - Gate-Source Voltage (V)
VDG - Drain-Gate Voltage (V)
Noise Voltage vs. Frequency
100 VDS = 5 V gfs - Forward Transconductance (mS) Hz 100
Transconductance vs. Drain Current
VGS(off) = -4 V
en - Noise Voltage nV /
TA = -55_C 10 125_C
25_C
10 ID = 10 mA
VDS = 5 V f = 1 kHz 1
ID = 40 mA 1 10 100 1k f - Frequency (Hz) 10 k 100 k
1
10 ID - Drain Current (mA)
100
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Document Number: 70245 S-04028--Rev. F, 04-Jun-01
2N5432/5433/5434
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Common Gate Input Admittance
100 gig 100 -gfg
Common Gate Forward Admittance
10 (mS) (mS)
10
bfg 1 big TA = 25_C VDG = 20 V ID = 20 mA 0.1 10 20 50 100 f - Frequency (MHz) 0.1 10 20 f - Frequency (MHz) 50 100 1 TA = 25_C VDG = 20 V ID = 20 mA
Common Gate Reverse Admittance
10 TA = 25_C VDG = 20 V ID = 20 mA 100
Common Gate Output Admittance
TA = 25_C VDG = 20 V ID = 20 mA
1.0 (mS)
-grg -brg (mS)
10
bog
gog 0.1 1
0.01 10 50 20 f - Frequency (MHz) 100
0.1 10 20 50 f - Frequency (MHz) 100
VDD
SWITCHING TIME TEST CIRCUIT
2N5432
VGS(L) RL* ID(on) -12 V 145 W 10 mA
RL OUT VGS(H) VGS(L) 1 k VIN Scope 51
2N5433
-12 V 143 W 10 mA
2N5434
-12 V 140 W 10 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70245 S-04028--Rev. F, 04-Jun-01
SAMPLING SCOPE
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF
51
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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